Immobilization of enzyme and antibody on ALD-HfO2-EIS structure by NH3 plasma treatment

نویسندگان

  • I-Shun Wang
  • Yi-Ting Lin
  • Chi-Hsien Huang
  • Tseng-Fu Lu
  • Cheng-En Lue
  • Polung Yang
  • Dorota G Pijanswska
  • Chia-Ming Yang
  • Jer-Chyi Wang
  • Jau-Song Yu
  • Yu-Sun Chang
  • Chien Chou
  • Chao-Sung Lai
چکیده

Thin hafnium oxide layers deposited by an atomic layer deposition system were investigated as the sensing membrane of the electrolyte-insulator-semiconductor structure. Moreover, a post-remote NH3 plasma treatment was proposed to replace the complicated silanization procedure for enzyme immobilization. Compared to conventional methods using chemical procedures, remote NH3 plasma treatment reduces the processing steps and time. The results exhibited that urea and antigen can be successfully detected, which indicated that the immobilization process is correct.

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عنوان ژورنال:

دوره 7  شماره 

صفحات  -

تاریخ انتشار 2012